VNB35N07TR-E Power Canjin ICs - Rarraba Wutar OMNIFETII CIKAKKEN KARE Pwr MOSFET
♠ Bayanin samfur
| Siffar Samfur | Siffar Darajar |
| Mai ƙira: | STMicroelectronics |
| Rukunin samfur: | Power Switch ICs - Rarraba Wuta |
| Nau'in: | Ƙananan Gefe |
| Adadin abubuwan da aka fitar: | 1 Fitowa |
| Iyaka na Yanzu: | 35 A |
| Kan Juriya - Max: | 28 mhm |
| Kan Lokaci - Max: | 200 ns |
| Lokacin Kashe - Max: | 1 mu |
| Wutar Lantarki Mai Aiki: | 28 V |
| Mafi ƙarancin zafin aiki: | -40 C |
| Matsakaicin Yanayin Aiki: | + 150 C |
| Salon hawa: | SMD/SMT |
| Kunshin / Harka: | D2PAK-3 |
| Jerin: | Saukewa: VNB35N07-E |
| cancanta: | Saukewa: AEC-Q100 |
| Marufi: | Karfe |
| Marufi: | Yanke Tef |
| Marufi: | MouseReel |
| Alamar: | STMicroelectronics |
| Danshi Mai Hankali: | Ee |
| Pd - Rashin Wutar Lantarki: | 125000mW |
| Nau'in Samfur: | Power Switch ICs - Rarraba Wuta |
| Yawan Kunshin Masana'anta: | 1000 |
| Rukuni: | Canza ICs |
| Nauyin Raka'a: | 0.079014 oz |
♠ OMNIFET: MOSFET mai cikakken kariya mai sarrafa kansa
VNP35N07-E, VNB35N07-E da VNV35N07-E sune na'urorin monolithic da aka yi ta amfani da fasahar STMicroelectronics VIPower®, wanda aka yi niyya don maye gurbin daidaitattun MOSFET na wutar lantarki a DC zuwa aikace-aikacen 50 KHz.
Ginin rufewar zafi a ciki, iyakancewar layi na yanzu da matsi da yawa suna kare guntu a cikin yanayi mara kyau.
Ana iya gano amsa kuskure ta hanyar saka idanu akan ƙarfin lantarki a fil ɗin shigarwa.
• Cancantar mota
• Iyakantaccen layi na yanzu
• Rufewar thermal
• Gajeren kariya na kewaye
• Haɗe-haɗe manne
• Ƙananan halin yanzu da aka zana daga fil ɗin shigarwa
Bayanin bincike ta hanyar shigar fil
• Kariyar ESD
• Samun kai tsaye zuwa ƙofar MOSFET Power (tuƙin analog)
• Mai jituwa tare da daidaitaccen wutar lantarki MOSFET
• Standard TO-220 kunshin
• Mai bin umarnin Turai na 2002/95/EC
