SI9435BDY-T1-E3 MOSFET 30V 5.7A 0.042Ohm
♠ Bayanin samfur
| Siffar Samfur | Siffar Darajar |
| Mai ƙira: | Vishay |
| Rukunin samfur: | MOSFET |
| RoHS: | Cikakkun bayanai |
| Fasaha: | Si |
| Salon hawa: | SMD/SMT |
| Kunshin/Kasuwa: | SOIC-8 |
| Transistor Polarity: | P-Channel |
| Adadin Tashoshi: | 1 Tashoshi |
| Vds - Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ruwa: | 30 V |
| Id - Ci gaba da Magudanar Ruwa a halin yanzu: | 5.7 A |
| Rds On - Juriya-Magudanar Ruwa: | 42 mohm |
| Vgs - Ƙofar-Source Voltage: | - 10 V, + 10 V |
| Vgs th - Ƙofar-Source Wutar Wutar Lantarki: | 1 V |
| Qg - Cajin Ƙofar: | 24 nc |
| Mafi ƙarancin zafin aiki: | -55C |
| Matsakaicin Yanayin Aiki: | + 150 C |
| Pd - Rashin Wutar Lantarki: | 2.5 W |
| Yanayin Tashoshi: | Haɓakawa |
| Sunan kasuwanci: | TrenchFET |
| Marufi: | Karfe |
| Marufi: | Yanke Tef |
| Marufi: | MouseReel |
| Alamar: | Vishay Semiconductors |
| Tsari: | Single |
| Lokacin Faɗuwa: | 30 ns |
| Canjin Gabatarwa - Min: | 13 S |
| Nau'in Samfur: | MOSFET |
| Lokacin Tashi: | 42ns ku |
| Jerin: | SI9 |
| Yawan Kunshin Masana'anta: | 2500 |
| Rukuni: | MOSFETs |
| Nau'in Transistor: | 1 P-Channel |
| Yawancin Lokacin Jinkiri na Kashewa: | 30 ns |
| Yawancin Lokacin Jinkiri na Kunnawa: | 14 ns |
| Sashe # Laƙabi: | Saukewa: SI9435BDY-E3 |
| Nauyin Raka'a: | 750 mg |
• Halogen-free bisa ga ma'anar IEC 61249-2-21
• TrenchFET® Power MOSFET
• Yarda da umarnin RoHS 2002/95/EC
