SI7461DP-T1-GE3 MOSFET -60V Vds 20Vgs PowerPAK SO-8

Takaitaccen Bayani:

Masu masana'anta: Vishay
Category samfurin: MOSFET
Takardar bayanai:Saukewa: SI7461DP-T1-GE3
Bayani: MOSFET P-CH 60V 8.6A PPAK SO-8
Matsayin RoHS: Mai yarda da RoHS


Cikakken Bayani

Siffofin

Tags samfurin

♠ Bayanin samfur

Siffar Samfur Siffar Darajar
Mai ƙira: Vishay
Rukunin samfur: MOSFET
RoHS: Cikakkun bayanai
Fasaha: Si
Salon hawa: SMD/SMT
Kunshin/Kasuwa: SOIC-8
Transistor Polarity: P-Channel
Adadin Tashoshi: 1 Tashoshi
Vds - Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ruwa: 30 V
Id - Ci gaba da Magudanar Ruwa a halin yanzu: 5.7 A
Rds On - Juriya-Magudanar Ruwa: 42 mohm
Vgs - Ƙofar-Source Voltage: - 10 V, + 10 V
Vgs th - Ƙofar-Source Wutar Wutar Lantarki: 1 V
Qg - Cajin Ƙofar: 24 nc
Mafi ƙarancin zafin aiki: -55C
Matsakaicin Yanayin Aiki: + 150 C
Pd - Rashin Wutar Lantarki: 2.5 W
Yanayin Tashoshi: Haɓakawa
Sunan kasuwanci: TrenchFET
Marufi: Karfe
Marufi: Yanke Tef
Marufi: MouseReel
Alamar: Vishay Semiconductors
Tsari: Single
Lokacin Faɗuwa: 30 ns
Canjin Gabatarwa - Min: 13 S
Nau'in Samfur: MOSFET
Lokacin Tashi: 42ns ku
Jerin: SI9
Yawan Kunshin Masana'anta: 2500
Rukuni: MOSFETs
Nau'in Transistor: 1 P-Channel
Yawancin Lokacin Jinkiri na Kashewa: 30 ns
Yawancin Lokacin Jinkiri na Kunnawa: 14 ns
Sashe # Laƙabi: Saukewa: SI9435BDY-E3
Nauyin Raka'a: 750 mg

  • Na baya:
  • Na gaba:

  • • TrenchFET® ikon MOSFETs

    • Kunshin PowerPAK® ƙarancin juriya mai zafi tare da ƙarancin bayanin martaba na 1.07 mmEC

    Samfura masu dangantaka