SI7461DP-T1-GE3 MOSFET -60V Vds 20Vgs PowerPAK SO-8
♠ Bayanin samfur
Siffar Samfur | Siffar Darajar |
Mai ƙira: | Vishay |
Rukunin samfur: | MOSFET |
RoHS: | Cikakkun bayanai |
Fasaha: | Si |
Salon hawa: | SMD/SMT |
Kunshin/Kasuwa: | SOIC-8 |
Transistor Polarity: | P-Channel |
Adadin Tashoshi: | 1 Tashoshi |
Vds - Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ruwa: | 30 V |
Id - Ci gaba da Magudanar Ruwa a halin yanzu: | 5.7 A |
Rds On - Juriya-Magudanar Ruwa: | 42 mohm |
Vgs - Ƙofar-Source Voltage: | - 10 V, + 10 V |
Vgs th - Ƙofar-Source Wutar Wutar Lantarki: | 1 V |
Qg - Cajin Ƙofar: | 24 nc |
Mafi ƙarancin zafin aiki: | -55C |
Matsakaicin Yanayin Aiki: | + 150 C |
Pd - Rashin Wutar Lantarki: | 2.5 W |
Yanayin Tashoshi: | Haɓakawa |
Sunan kasuwanci: | TrenchFET |
Marufi: | Karfe |
Marufi: | Yanke Tef |
Marufi: | MouseReel |
Alamar: | Vishay Semiconductors |
Tsari: | Single |
Lokacin Faɗuwa: | 30 ns |
Canjin Gabatarwa - Min: | 13 S |
Nau'in Samfur: | MOSFET |
Lokacin Tashi: | 42ns ku |
Jerin: | SI9 |
Yawan Kunshin Masana'anta: | 2500 |
Rukuni: | MOSFETs |
Nau'in Transistor: | 1 P-Channel |
Yawancin Lokacin Jinkiri na Kashewa: | 30 ns |
Yawancin Lokacin Jinkiri na Kunnawa: | 14 ns |
Sashe # Laƙabi: | Saukewa: SI9435BDY-E3 |
Nauyin Raka'a: | 750 mg |
• TrenchFET® ikon MOSFETs
• Kunshin PowerPAK® ƙarancin juriya mai zafi tare da ƙarancin bayanin martaba na 1.07 mmEC