SI7119DN-T1-GE3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
♠ Bayanin samfur
| Siffar Samfur | Siffar Darajar |
| Mai ƙira: | Vishay |
| Rukunin samfur: | MOSFET |
| RoHS: | Cikakkun bayanai |
| Fasaha: | Si |
| Salon hawa: | SMD/SMT |
| Kunshin/Kasuwa: | PowerPAK-1212-8 |
| Transistor Polarity: | P-Channel |
| Adadin Tashoshi: | 1 Tashoshi |
| Vds - Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ruwa: | 200 V |
| Id - Ci gaba da Magudanar Ruwa a halin yanzu: | 3.8 A |
| Rds On - Juriya-Magudanar Ruwa: | 1.05 ohms |
| Vgs - Ƙofar-Source Voltage: | - 20V, + 20V |
| Vgs th - Ƙofar-Source Wutar Wutar Lantarki: | 2 V |
| Qg - Cajin Ƙofar: | 25 nc |
| Mafi ƙarancin zafin aiki: | - 50 C |
| Matsakaicin Yanayin Aiki: | + 150 C |
| Pd - Rashin Wutar Lantarki: | 52 W |
| Yanayin Tashoshi: | Haɓakawa |
| Sunan kasuwanci: | TrenchFET |
| Marufi: | Karfe |
| Marufi: | Yanke Tef |
| Marufi: | MouseReel |
| Alamar: | Vishay Semiconductors |
| Tsari: | Single |
| Lokacin Faɗuwa: | 12 ns |
| Canjin Gabatarwa - Min: | 4 S |
| Tsayi: | 1.04 mm |
| Tsawon: | 3.3 mm |
| Nau'in Samfur: | MOSFET |
| Lokacin Tashi: | 11 ns |
| Jerin: | SI7 |
| Yawan Kunshin Masana'anta: | 3000 |
| Rukuni: | MOSFETs |
| Nau'in Transistor: | 1 P-Channel |
| Yawancin Lokacin Jinkiri na Kashewa: | 27 ns |
| Yawancin Lokacin Jinkiri na Kunnawa: | 9 ns |
| Nisa: | 3.3 mm |
| Sashe # Laƙabi: | Saukewa: SI7119DN-GE3 |
| Nauyin Raka'a: | 1 g ku |
• Halogen-free bisa ga IEC 61249-2-21 Akwai
• TrenchFET® Power MOSFET
• Kunshin Thermal Resistance Powerpak® kunshin tare da kananan girman da ƙananan bayanan martaba na 1.07
• 100 % UIS da Rg Gwaji
• Matsa mai aiki a cikin Matsakaicin Kayan Wutar Lantarki na DC/DC
