SAMSUNG na shirin rubanya karfin samar da guntuwar ta nan da shekarar 2027

Jeong Ki-tae, mataimakin shugaban sashen bunkasa fasahar kere-kere na sashen kasuwanci na kamfanin, ya ce Samsung Electronics ya yi nasarar samar da guntu mai girman nanometer 3 bisa fasahar GAA a karon farko a duniya a wannan shekarar, tare da rage karfin wutar lantarki da kashi 45 cikin dari. 23 bisa dari mafi girman aiki da kashi 16 ƙasa da ƙasa idan aka kwatanta da guntu na 5-nanometer.

Har ila yau, Samsung Electronics yana shirin yin wani yunƙuri don faɗaɗa ƙarfin samar da guntuwar guntuwar sa, wanda ke da nufin haɓaka ƙarfin samar da shi fiye da sau uku nan da 2027. Don haka, chipmaker yana bin dabarar "harsashi-farko", wanda ya haɗa da ginawa daki mai tsabta da farko sannan kuma ana gudanar da wurin cikin sassauƙa yayin da bukatar kasuwa ta taso.

Choi Si-young, shugaban sashen kasuwanci na kamfanin Samsung Electronics, ya ce, "Muna aiki da masana'antu biyar a Koriya da Amurka, kuma mun samar da wuraren gina masana'antu fiye da 10."

IT House ta gano cewa Samsung Electronics na shirin kaddamar da tsarinsa na 3-nanometer na ƙarni na biyu a cikin 2023, fara samar da nanometer 2-nanometer a cikin 2025, da ƙaddamar da tsarin 1.4 nanometer a 2027, taswirar fasaha da Samsung ya fara bayyana a San. Francisco a ranar Oktoba 3 (lokacin gida).