SAMSUNG na shirin rubanya karfin samar da guntuwar ta nan da shekarar 2027

Jeong Ki-tae, mataimakin shugaban ci gaban fasaha na sashen kasuwanci na kamfanin, ya ce Samsung Electronics ya yi nasarar samar da guntu mai girman nanometer 3 bisa fasahar GAA a karon farko a duniya a wannan shekarar, tare da rage karfin amfani da wutar lantarki da kashi 45 cikin dari, kashi 23 cikin 100 mafi girman aiki da kashi 16 cikin dari idan aka kwatanta da guntu na 5-nanometer.

Har ila yau, Samsung Electronics yana shirin yin wani yunƙuri don faɗaɗa ƙarfin samar da guntuwar guntuwar sa, wanda ke da nufin haɓaka ƙarfin samar da shi fiye da sau uku nan da 2027. Don haka, na'urar tana bin dabarun "harsashi-farko", wanda ya haɗa da gina ɗaki mai tsabta da farko sannan kuma yana aiki da kayan aiki cikin sassauƙa kamar yadda kasuwa ta buƙaci.

Choi Si-young, shugaban sashen kasuwanci na kamfanin Samsung Electronics, ya ce, "Muna aiki da masana'antu biyar a Koriya da Amurka, kuma mun samar da wuraren gina masana'antu fiye da 10."

IT House ta fahimci cewa Samsung Electronics yana shirin ƙaddamar da tsarinsa na 3-nanometer na ƙarni na biyu a cikin 2023, fara samar da 2-nanometer a cikin 2025, da ƙaddamar da tsarin 1.4 nanometer a 2027, taswirar fasaha da Samsung ya fara bayyana a San Francisco a ranar 3 ga Oktoba (lokacin gida).