IKW75N65EH5XKSA1 IGBT Transistors INDUSTRY 14

Takaitaccen Bayani:

Masu masana'anta: Infineon Technologies
Category samfurin: Transistor - IGBTs - Single
Takardar bayanai:Saukewa: IKW75N65EH5XKSA1
Bayani: IGBT TRENCH 650V 90A TO247-3
Matsayin RoHS: Mai yarda da RoHS


Cikakken Bayani

Siffofin

Aikace-aikace

Tags samfurin

♠ Bayanin samfur

Siffar Samfur Siffar Darajar
Mai ƙira: Infineon
Rukunin samfur: Farashin IGBT
Fasaha: Si
Kunshin / Harka: ZUWA-247-3
Salon hawa: Ta hanyar Hole
Tsari: Single
Mai tara-Emitter Voltage VCEO Max: 650 V
Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙira-Emitter: 1.65 V
Matsakaicin Ƙofar Emitter Voltage: 20 V
Ci gaba da Tara A halin yanzu a 25 C: 90 A
Pd - Rashin Wutar Lantarki: 395 W
Mafi ƙarancin zafin aiki: -40 C
Matsakaicin Yanayin Aiki: + 175 C
Jerin: Farashin IGBT5
Marufi: Tube
Alamar: Infineon Technologies
Leakawar Ƙofar Emitter Yanzu: 100 nA
Tsayi: 20.7 mm
Tsawon: 15.87 mm
Nau'in Samfur: Farashin IGBT
Yawan Kunshin Masana'anta: 240
Rukuni: IGBTs
Sunan kasuwanci: TSAYAWA
Nisa: 5.31 mm
Sashe # Laƙabi: IKW75N65EH5 SP001257948
Nauyin Raka'a: 0.211644 oz

 


  • Na baya:
  • Na gaba:

  • HighspeedH5 fasaha tayi
    •Mafi kyawun-in-Classasififitila mai saurin juye-juye da ma'anar topologies
    •Masanin wasa na farko na IBTs
    • 650V rushewar wutar lantarki
    • LowatechargeQG
    •IBT an kwafa tare da cikakken-ratedRAPID1fastandsoftantiparallel diode
    •Maximumjunction zafin jiki175°C
    • Cancanta bisa ga JEDECfortargetapplications
    •Pb-freeleadplating;RoHS mai yarda
    • CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igt/

    •Kayan wutar lantarki mara katsewa
    •Masu canza hasken rana
    •Masu canza walda
    •Matsakaicin masu sauya juzu'i

    Samfura masu dangantaka