IKW50N65EH5XKSA1 IGBT Transistors INDUSTRY 14
♠ Bayanin samfur
| Siffar Samfur | Siffar Darajar |
| Mai ƙira: | Infineon |
| Rukunin samfur: | Farashin IGBT |
| Fasaha: | Si |
| Kunshin / Harka: | ZUWA-247-3 |
| Salon hawa: | Ta hanyar Hole |
| Tsari: | Single |
| Mai tara-Emitter Voltage VCEO Max: | 650 V |
| Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙira-Emitter: | 1.65 V |
| Matsakaicin Ƙofar Emitter Voltage: | 20 V |
| Ci gaba da Tara A halin yanzu a 25 C: | 80 A |
| Pd - Rashin Wutar Lantarki: | 275 W |
| Mafi ƙarancin zafin aiki: | -40 C |
| Matsakaicin Yanayin Aiki: | + 175 C |
| Jerin: | Farashin IGBT5 |
| Marufi: | Tube |
| Alamar: | Infineon Technologies |
| Leakawar Ƙofar Emitter Yanzu: | 100 nA |
| Tsayi: | 20.7 mm |
| Tsawon: | 15.87 mm |
| Nau'in Samfur: | Farashin IGBT |
| Yawan Kunshin Masana'anta: | 240 |
| Rukuni: | IGBTs |
| Sunan kasuwanci: | TSAYAWA |
| Nisa: | 5.31 mm |
| Sashe # Laƙabi: | IKW50N65EH5 SP001257944 |
| Nauyin Raka'a: | 0.213383 oz |
HighspeedH5 fasaha tayi
•Mafi kyawun-in-Classasififitila mai saurin juye-juye da ma'anar topologies
•Masanin wasa na farko na IBTs
• 650V rushewar wutar lantarki
• LowatechargeQG
•IBT an kwafa tare da cikakken-ratedRAPID1fastandsoftantiparallel diode
•Maximumjunction zafin jiki175°C
• Cancanta bisa ga JEDECfortargetapplications
•Pb-freeleadplating;RoHS mai yarda
• CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igt/
•Kayan wutar lantarki mara katsewa
•Masu canza hasken rana
•Masu canza walda
•Matsakaicin masu sauya juzu'i
