FDV301N MOSFET N-CH Digital

Takaitaccen Bayani:

Masu kera: ON Semiconductor

Kayan samfur: Transistor - FETs, MOSFETs - Single

Takardar bayanai:Saukewa: FDV301N

Bayani: MOSFET N-CH 25V 220MA SOT-23

Matsayin RoHS: Mai yarda da RoHS


Cikakken Bayani

Siffofin

Tags samfurin

♠ Bayanin samfur

Siffar Samfur Siffar Darajar
Mai ƙira: wani
Rukunin samfur: MOSFET
RoHS: Cikakkun bayanai
Fasaha: Si
Salon hawa: SMD/SMT
Kunshin / Harka: SOT-23-3
Transistor Polarity: N-Channel
Adadin Tashoshi: 1 Tashoshi
Vds - Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ruwa: 25 V
Id - Ci gaba da Magudanar Ruwa a halin yanzu: 220 mA
Rds On - Juriya-Magudanar Ruwa: 5 ohms
Vgs - Ƙofar-Source Voltage: - 8V, + 8V
Vgs th - Ƙofar-Source Wutar Wutar Lantarki: 700mV
Qg - Cajin Ƙofar: 700pc
Mafi ƙarancin zafin aiki: -55C
Matsakaicin Yanayin Aiki: + 150 C
Pd - Rashin Wutar Lantarki: 350mW
Yanayin Tashoshi: Haɓakawa
Marufi: Karfe
Marufi: Yanke Tef
Marufi: MouseReel
Alamar: onsemi / Fairchild
Tsari: Single
Lokacin Faɗuwa: 6 ns
Canjin Gabatarwa - Min: 0.2 S
Tsayi: 1.2 mm
Tsawon: 2.9 mm
Samfura: MOSFET Ƙaramar Siginar
Nau'in Samfur: MOSFET
Lokacin Tashi: 6 ns
Jerin: Saukewa: FDV301N
Yawan Kunshin Masana'anta: 3000
Rukuni: MOSFETs
Nau'in Transistor: 1 N-Channel
Nau'in: FET
Yawancin Lokacin Jinkiri na Kashewa: 3,5ns
Yawancin Lokacin Jinkiri na Kunnawa: 3.2ns
Nisa: 1.3 mm
Sashe # Laƙabi: Saukewa: FDV301N_NL
Nauyin Raka'a: 0.000282 oz

♠ Digital FET, N-Channel FDV301N, FDV301N-F169

An samar da wannan N-Channel matakin dabaru na yanayin haɓaka yanayin tasirin tasirin transistor ta amfani da mallakar onsemi, babban yawan tantanin halitta, fasahar DMOS.Wannan babban tsari mai yawa an keɓe shi musamman don rage juriya a kan-jihar.An ƙera wannan na'urar musamman don aikace-aikacen ƙarancin wutar lantarki a matsayin maye gurbin transistor na dijital.Tunda ba a buƙatar masu bias bias, wannan N-tashar FET na iya maye gurbin transistor na dijital daban-daban, tare da ƙima mai ƙima daban-daban.


  • Na baya:
  • Na gaba:

  • • 25 V, 0.22 A Ci gaba, 0.5 A Kololuwa

    ♦ RDS (akan) = 5 @ VGS = 2.7 V

    ♦ RDS (akan) = 4 @ VGS = 4.5 V

    • Bukatun Direban Ƙofar Ƙofar Ƙarƙashin Ƙofar Ƙofar Ƙofar Ba da izinin Aiki kai tsaye a cikin 3 V.VGS (th) <1.06 V

    Ƙofar-Source Zener don Ruggedness ESD.> 6kV Model Jikin Dan Adam

    • Maye gurbin Multiple NPN Digital Transistor tare da DMOS FET guda ɗaya

    Wannan Na'urar Pb - Kyauta ce kuma Kyauta ce ta Halide

    Samfura masu dangantaka