Direbobin Ƙofar VNS1NV04DPTR-E OMNIFET POWER MOSFET 40V 1.7 A
♠ Bayanin samfur
| Siffar Samfur | Siffar Darajar |
| Mai ƙira: | STMicroelectronics |
| Rukunin samfur: | Direbobin Kofa |
| Samfura: | Direbobin Ƙofar MOSFET |
| Nau'in: | Ƙananan-Gida |
| Salon hawa: | SMD/SMT |
| Kunshin / Harka: | SOIC-8 |
| Adadin Direbobi: | 2 Direba |
| Adadin abubuwan da aka fitar: | 2 Fitowa |
| Fitowar Yanzu: | 1.7 A |
| Ƙarfin Ƙarfafawa - Max: | 24 V |
| Lokacin Tashi: | 500 ns |
| Lokacin Faɗuwa: | 600 ns |
| Mafi ƙarancin zafin aiki: | -40 C |
| Matsakaicin Yanayin Aiki: | + 150 C |
| Jerin: | Saukewa: VNS1NV04DP-E |
| cancanta: | Saukewa: AEC-Q100 |
| Marufi: | Karfe |
| Marufi: | Yanke Tef |
| Marufi: | MouseReel |
| Alamar: | STMicroelectronics |
| Danshi Mai Hankali: | Ee |
| Kayan Aiki Na Yanzu: | 150 uA |
| Nau'in Samfur: | Direbobin Kofa |
| Yawan Kunshin Masana'anta: | 2500 |
| Rukuni: | PMIC - Gudanar da wutar lantarki ICs |
| Fasaha: | Si |
| Nauyin Raka'a: | 0.005291 oz |
♠ OMNIFET II cikakken ikon MOSFET mai sarrafa kansa
VNS1NV04DP-E na'ura ce da aka kirkira ta guntu guda biyu na OMNIFET II da aka ajiye a cikin daidaitaccen kunshin SO-8. An tsara OMNIFET II a cikin fasahar STMicroelectronics VIPower™ M0-3: an yi nufin su maye gurbin daidaitattun MOSFET na wutar lantarki daga DC har zuwa aikace-aikacen 50KHz. Gina a cikin rufewar zafi, iyakancewar layi na yanzu da matsawar ƙarfin wuta yana kare guntu a cikin yanayi mara kyau.
Ana iya gano amsa kuskure ta hanyar saka idanu akan ƙarfin lantarki a fil ɗin shigarwa.
• Iyakantaccen layi na yanzu
• Rufewar thermal
• Gajeren kariya na kewaye
• Haɗe-haɗe manne
• Ƙananan halin yanzu da aka zana daga fil ɗin shigarwa
Bayanin bincike ta hanyar shigar fil
• Kariyar ESD
Kai tsaye zuwa ƙofar mosfet na wutar lantarki (tuƙin analog)
• Mai jituwa tare da daidaitaccen mosfet na wutar lantarki
• Dangane da umarnin Turai na 2002/95/EC
