SI9945BDY-T1-GE3 MOSFET 60V Vds 20V Vgs SO-8
♠ Bayanin samfur
Siffar Samfur | Siffar Darajar |
Mai ƙira: | Vishay |
Rukunin samfur: | MOSFET |
RoHS: | Cikakkun bayanai |
Fasaha: | Si |
Salon hawa: | SMD/SMT |
Kunshin/Kasuwa: | SOIC-8 |
Transistor Polarity: | N-Channel |
Adadin Tashoshi: | 2 Channel |
Vds - Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ruwa: | 60 V |
Id - Ci gaba da Magudanar Ruwa a halin yanzu: | 5.3 A |
Rds On - Juriya-Magudanar Ruwa: | 58 mhm |
Vgs - Ƙofar-Source Voltage: | - 20V, + 20V |
Vgs th - Ƙofar-Source Wutar Wutar Lantarki: | 1 V |
Qg - Cajin Ƙofar: | 13 nc |
Mafi ƙarancin zafin aiki: | -55C |
Matsakaicin Yanayin Aiki: | + 150 C |
Pd - Rashin Wutar Lantarki: | 3.1 W |
Yanayin Tashoshi: | Haɓakawa |
Sunan kasuwanci: | TrenchFET |
Marufi: | Karfe |
Marufi: | Yanke Tef |
Marufi: | MouseReel |
Alamar: | Vishay Semiconductors |
Tsari: | Dual |
Lokacin Faɗuwa: | 10 ns |
Canjin Gabatarwa - Min: | 15 S |
Nau'in Samfur: | MOSFET |
Lokacin Tashi: | 15 ns, 65ns |
Jerin: | SI9 |
Yawan Kunshin Masana'anta: | 2500 |
Rukuni: | MOSFETs |
Nau'in Transistor: | 2 N-Channel |
Yawancin Lokacin Jinkiri na Kashewa: | 10 ns, 15 ns |
Yawancin Lokacin Jinkiri na Kunnawa: | 15 ns, 20 ns |
Sashe # Laƙabi: | Saukewa: SI9945BDY-GE3 |
Nauyin Raka'a: | 750 mg |
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