SI2305CDS-T1-GE3 MOSFET -8V Vds 8V Vgs SOT-23
♠ Bayanin samfur
| Siffar Samfur | Siffar Darajar |
| Mai ƙira: | Vishay |
| Rukunin samfur: | MOSFET |
| Fasaha: | Si |
| Salon hawa: | SMD/SMT |
| Kunshin / Harka: | SOT-23-3 |
| Transistor Polarity: | P-Channel |
| Adadin Tashoshi: | 1 Tashoshi |
| Vds - Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ruwa: | 8 V |
| Id - Ci gaba da Magudanar Ruwa a halin yanzu: | 5.8 A |
| Rds On - Juriya-Magudanar Ruwa: | 35 mohm |
| Vgs - Ƙofar-Source Voltage: | - 8V, + 8V |
| Vgs th - Ƙofar-Source Wutar Wutar Lantarki: | 1 V |
| Qg - Cajin Ƙofar: | 12 nc |
| Mafi ƙarancin zafin aiki: | -55C |
| Matsakaicin Yanayin Aiki: | + 150 C |
| Pd - Rashin Wutar Lantarki: | 1.7 W |
| Yanayin Tashoshi: | Haɓakawa |
| Sunan kasuwanci: | TrenchFET |
| Marufi: | Karfe |
| Marufi: | Yanke Tef |
| Marufi: | MouseReel |
| Alamar: | Vishay Semiconductors |
| Tsari: | Single |
| Lokacin Faɗuwa: | 10 ns |
| Tsayi: | 1.45 mm |
| Tsawon: | 2.9 mm |
| Nau'in Samfur: | MOSFET |
| Lokacin Tashi: | 20 ns |
| Jerin: | SI2 |
| Yawan Kunshin Masana'anta: | 3000 |
| Rukuni: | MOSFETs |
| Nau'in Transistor: | 1 P-Channel |
| Yawancin Lokacin Jinkiri na Kashewa: | 40 ns |
| Yawancin Lokacin Jinkiri na Kunnawa: | 20 ns |
| Nisa: | 1.6 mm |
| Sashe # Laƙabi: | SI2305CDS-T1-BE3 SI2305CDS-GE3 |
| Nauyin Raka'a: | 0.000282 oz |
• Halogen-free bisa ga ma'anar IEC 61249-2-21
• TrenchFET® Power MOSFET
• 100 % Rg Gwaji
• Yarda da umarnin RoHS 2002/95/EC
• Load Canja don Na'urori masu ɗaukar nauyi
• Mai sauya DC/DC
