SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P BIYU
♠ Bayanin samfur
| Siffar Samfur | Siffar Darajar |
| Mai ƙira: | Vishay |
| Rukunin samfur: | MOSFET |
| RoHS: | Cikakkun bayanai |
| Fasaha: | Si |
| Salon hawa: | SMD/SMT |
| Kunshin/Kasuwa: | Saukewa: SC-89-6 |
| Transistor Polarity: | N-Channel, P-Channel |
| Adadin Tashoshi: | 2 Channel |
| Vds - Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ruwa: | 60 V |
| Id - Ci gaba da Magudanar Ruwa a halin yanzu: | 500 mA |
| Rds On - Juriya-Magudanar Ruwa: | 1.4 ohms, 4 ohms |
| Vgs - Ƙofar-Source Voltage: | - 20V, + 20V |
| Vgs th - Ƙofar-Source Wutar Wutar Lantarki: | 1 V |
| Qg - Cajin Ƙofar: | 750 pc, 1.7 nc |
| Mafi ƙarancin zafin aiki: | -55C |
| Matsakaicin Yanayin Aiki: | + 150 C |
| Pd - Rashin Wutar Lantarki: | 280mW |
| Yanayin Tashoshi: | Haɓakawa |
| Sunan kasuwanci: | TrenchFET |
| Marufi: | Karfe |
| Marufi: | Yanke Tef |
| Marufi: | MouseReel |
| Alamar: | Vishay Semiconductors |
| Tsari: | Dual |
| Canjin Gabatarwa - Min: | 200mS, 100mS |
| Tsayi: | 0.6 mm |
| Tsawon: | 1.66 mm |
| Nau'in Samfur: | MOSFET |
| Jerin: | SI1 |
| Yawan Kunshin Masana'anta: | 3000 |
| Rukuni: | MOSFETs |
| Nau'in Transistor: | 1 N-Channel, 1 P-Channel |
| Yawancin Lokacin Jinkiri na Kashewa: | 20 ns, 35 ns |
| Yawancin Lokacin Jinkiri na Kunnawa: | 15 ns, 20 ns |
| Nisa: | 1.2 mm |
| Sashe # Laƙabi: | Saukewa: SI1029X-GE3 |
| Nauyin Raka'a: | 32 mg |
• Halogen-free bisa ga ma'anar IEC 61249-2-21
• TrenchFET® Power MOSFETs
• Ƙananan Sawun ƙafa
• Canjawar Babban Gefe
Ƙananan Juriya:
N-Channel, 1.40 Ω
P-Channel, 4 Ω
• Ƙananan Ƙofar: ± 2 V (nau'i.)
• Saurin Canjawa: 15 ns (nau'i.)
• Ƙofar-Source ESD Kariyar: 2000 V
• Yarda da umarnin RoHS 2002/95/EC
• Maye gurbin Digital Transistor, Level-Shifter
• Tsarukan Aiki da Baturi
• Wuraren Canza Wutar Lantarki
