Wani sabon nau'in guntun ƙwaƙwalwar ajiyar ferroelectric mai tushen hafnium wanda Liu Ming, Masanin Ilimin Cibiyar Microelectronics ya haɓaka kuma ya tsara shi a taron IEEE International Solid-State Circuits Conference (ISSCC) a cikin 2023, matakin mafi girman ƙirar ƙirar kewaye.
Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwararren Ƙwaƙwalwa na Ƙwaƙwalwa na Ƙaƙwalwa na Ƙaƙwalwa na Ƙaƙwalwa na Ƙaƙwalwa na Ƙaƙwalwa na Ƙaƙwalwa ) yana cikin buƙatu na SOC a cikin kayan lantarki na mabukaci, motoci masu cin gashin kansu, sarrafa masana'antu da na'urori masu gefe don Intanet na Abubuwa.Ƙwaƙwalwar Ferroelectric (FeRAM) tana da fa'idodi na babban abin dogaro, ƙarancin wutar lantarki, da babban gudu.Ana amfani da shi sosai a cikin adadi mai yawa na rikodi na bayanai a cikin ainihin lokaci, yawan karanta bayanai da rubutu, ƙarancin ƙarfin amfani da samfuran SoC/SiP da aka haɗa.Ƙwaƙwalwar Ferroelectric dangane da kayan PZT ya sami samarwa da yawa, amma kayan sa bai dace da fasahar CMOS ba kuma yana da wahalar raguwa, wanda ke haifar da ci gaban tsarin ƙwaƙwalwar ferroelectric na gargajiya yana da cikas, kuma haɗaɗɗen haɗin kai yana buƙatar tallafin layin samarwa daban, da wahala a yada shi. akan babban sikeli.Karancin sabon ƙwaƙwalwar hafnium na tushen ferroelectric da dacewarsa tare da fasahar CMOS ya sa ya zama wurin bincike na damuwa gama gari a cikin masana'antu da masana'antu.Hafnium-tushen ferroelectric ƙwaƙwalwar ajiya an ɗauke shi azaman muhimmin jagorar ci gaba na ƙarni na gaba na sabon ƙwaƙwalwar ajiya.A halin yanzu, binciken hafnium na tushen ferroelectric ƙwaƙwalwar ajiya har yanzu yana da matsaloli kamar ƙarancin amincin naúrar, ƙarancin ƙirar guntu tare da cikakkiyar kewaye, da ƙarin tabbatar da aikin matakin guntu, wanda ke iyakance aikace-aikacen sa a cikin eNVM.
Nufin kalubalen da ke tattare da ƙwaƙwalwar hafnium na tushen hafnium, ƙungiyar ƙwararrun Liu Ming daga Cibiyar Microelectronics ta ƙirƙira da aiwatar da guntu gwajin megab-magnitude FeRAM a karon farko a duniya dangane da babban dandamalin haɗin gwiwa. na hafnium-based ferroelectric memory wanda ya dace da CMOS, kuma ya sami nasarar kammala babban haɗe-haɗe na HZO ferroelectric capacitor a cikin tsarin 130nm CMOS.An gabatar da da'irar rubutawa ta ECC don sanin zafin jiki da da'irar amplifier mai mahimmanci don kawar da kashewa ta atomatik, kuma an sami dorewar zagayowar 1012 da rubuta 7n da lokacin karanta 5ns, waɗanda sune mafi kyawun matakan da aka ruwaito zuwa yanzu.
Takardar "A 9-Mb HZO-tushen FeRAM tare da 1012-Cycle Endurance da 5/7ns Karanta/Rubuta ta amfani da Taimakon Bayanan Bayanan ECC" ya dogara ne akan sakamakon da Amplifier-Canceled Sense Amplifier "an zaɓi a cikin ISSCC 2023, kuma an zaɓi guntu a cikin Zama na Demo na ISSCC don nunawa a cikin taron.Yang Jianguo shine marubuci na farko na takarda, kuma Liu Ming shine marubucin da ya dace.
Aikin da ya shafi wannan aikin yana samun goyon bayan gidauniyar kimiyyar dabi'a ta kasar Sin, da babban shirin bincike da raya kasa na ma'aikatar kimiyya da fasaha ta kasar, da shirin gwajin gwaji na aji B-Class na kwalejin kimiyyar kasar Sin.
(Hoton guntuwar FeRAM na tushen 9Mb Hafnium da gwajin aikin guntu)
Lokacin aikawa: Afrilu-15-2023