IPD50N04S4-10 MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
♠ Bayanin samfur
| Siffar Samfur | Siffar Darajar |
| Mai ƙira: | Infineon |
| Rukunin samfur: | MOSFET |
| RoHS: | Cikakkun bayanai |
| Fasaha: | Si |
| Salon hawa: | SMD/SMT |
| Kunshin/Kasuwa: | ZUWA-252-3 |
| Transistor Polarity: | N-Channel |
| Adadin Tashoshi: | 1 Tashoshi |
| Vds - Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ruwa: | 40 V |
| Id - Ci gaba da Magudanar Ruwa a halin yanzu: | 50 A |
| Rds On - Juriya-Magudanar Ruwa: | 9.3 mohm |
| Vgs - Ƙofar-Source Voltage: | - 20V, + 20V |
| Vgs th - Ƙofar-Source Wutar Wutar Lantarki: | 3 V |
| Qg - Cajin Ƙofar: | 18.2nc |
| Mafi ƙarancin zafin aiki: | -55C |
| Matsakaicin Yanayin Aiki: | + 175 C |
| Pd - Rashin Wutar Lantarki: | 41 W |
| Yanayin Tashoshi: | Haɓakawa |
| cancanta: | Saukewa: AEC-Q101 |
| Sunan kasuwanci: | OptiMOS |
| Marufi: | Karfe |
| Marufi: | Yanke Tef |
| Alamar: | Infineon Technologies |
| Tsari: | Single |
| Lokacin Faɗuwa: | 5 ns |
| Tsayi: | 2.3 mm |
| Tsawon: | 6.5 mm |
| Nau'in Samfur: | MOSFET |
| Lokacin Tashi: | 7 ns |
| Jerin: | OptiMOS-T2 |
| Yawan Kunshin Masana'anta: | 2500 |
| Rukuni: | MOSFETs |
| Nau'in Transistor: | 1 N-Channel |
| Yawancin Lokacin Jinkiri na Kashewa: | 4 ns |
| Yawancin Lokacin Jinkiri na Kunnawa: | 5 ns |
| Nisa: | 6.22 mm |
| Sashe # Laƙabi: | IPD5N4S41XT SP000711466 IPD50N04S410ATMA1 |
| Nauyin Raka'a: | 330 mg |
N-tashar – Yanayin haɓakawa
• cancantar AEC
• MSL1 har zuwa 260°C kololuwar sake kwarara
• 175°C zafin aiki
• Samfurin Green (RoHS mai yarda)
• An gwada dusar ƙanƙara 100%.
