FQU2N60CTU MOSFET 600V N-Channel Adv Q-FET C-Series
♠ Bayanin samfur
Siffar Samfur | Siffar Darajar |
Mai ƙira: | wani |
Rukunin samfur: | MOSFET |
Fasaha: | Si |
Salon hawa: | Ta hanyar Hole |
Kunshin / Harka: | ZUWA-251-3 |
Transistor Polarity: | N-Channel |
Adadin Tashoshi: | 1 Tashoshi |
Vds - Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ruwa: | 600 V |
Id - Ci gaba da Magudanar Ruwa a halin yanzu: | 1.9 A |
Rds On - Juriya-Magudanar Ruwa: | 4.7 ohm |
Vgs - Ƙofar-Source Voltage: | - 30V, + 30V |
Vgs th - Ƙofar-Source Wutar Wutar Lantarki: | 2 V |
Qg - Cajin Ƙofar: | 12 nc |
Mafi ƙarancin zafin aiki: | -55C |
Matsakaicin Yanayin Aiki: | + 150 C |
Pd - Rashin Wutar Lantarki: | 2.5 W |
Yanayin Tashoshi: | Haɓakawa |
Marufi: | Tube |
Alamar: | onsemi / Fairchild |
Tsari: | Single |
Lokacin Faɗuwa: | 28 ns |
Canjin Gabatarwa - Min: | 5 S |
Tsayi: | 6.3 mm |
Tsawon: | 6.8 mm |
Nau'in Samfur: | MOSFET |
Lokacin Tashi: | 25 ns |
Jerin: | Saukewa: FQU2N60C |
Yawan Kunshin Masana'anta: | 5040 |
Rukuni: | MOSFETs |
Nau'in Transistor: | 1 N-Channel |
Nau'in: | MOSFET |
Yawancin Lokacin Jinkiri na Kashewa: | 24 ns |
Yawancin Lokacin Jinkiri na Kunnawa: | 9 ns |
Nisa: | 2.5 mm |
Nauyin Raka'a: | 0.011993 oz |
♠ MOSFET - N-Channel, QFET 600 V, 1.9 A, 4,7
Wannan N-Channel ƙarfin yanayin haɓaka ƙarfin MOSFET ana sarrafa shi ta amfani da ratsin tsarin mallaka na onsemi da fasahar DMOS.Wannan fasaha ta MOSFET ta ci gaba an keɓance ta musamman don rage juriya a kan-jihar, da kuma samar da ingantaccen aikin sauya sheka da babban ƙarfin kuzari.Waɗannan na'urori sun dace da kayan wutar lantarki da aka canza, da gyaran wutar lantarki mai aiki (PFC), da ballasts na fitilar lantarki.
• 1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, ID = 0.95 A
• Karamar Cajin Ƙofar (Nau'in 8.5 nC)
• Ƙananan Crss (Nau'in 4.3 pF)
• An Gwaji 100% Dusar ƙanƙara
• Waɗannan na'urori ba su da Halid Kyauta kuma suna Yarda da RoHS